NSVBAS70LT1G(2016) 데이터 시트보기 (PDF) - ON Semiconductor

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NSVBAS70LT1G
(Rev.:2016)

Schottky Barrier Diodes

ON Semiconductor 

BAS70LT1G, NSVBAS70LT1G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Reverse Breakdown Voltage

(IR = 10 mA)

V(BR)R

V

70

−

Total Capacitance

(VR = 0 V, f = 1.0 MHz)

CT

pF

−

2.0

Reverse Leakage

(VR = 50 V)

(VR = 70 V)

Forward Voltage

(IF = 1.0 mA)

IR

mA

−

0.1

−

10

VF

mV

−

410

Forward Voltage

(IF = 10 mA)

VF

mV

−

750

Forward Voltage

(IF = 15 mA)

VF

V

−

1.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

TYPICAL CHARACTERISTICS

100

100

TA = 150°C

10

125°C

10

1.0

85°C

1.0

150°C

1 25°C

85°C

- 40°C

25°C

- 55°C

0.1

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

VF, FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

1.4

0.1

0.01

25°C

0.001

0 5.0 10 15 20 25 30 35 40 45 50

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Reverse Current versus Reverse

Voltage

1.2

1.0

0.8

0.6

0.4

0.2

0

0 5.0 10 15 20 25 30 35 40 45 50

VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Capacitance

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