2SB1057R 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SB1057R Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon PNP Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Max)@IC= -7A
·Wide Area of Safe Operation
·Complement to Type 2SD1488
APPLICATIONS
·Designed for high power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-9
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-15
A
3
W
100
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB1057
SPTECH website：www.superic-tech.com
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