SPTECH Product Specification
SPTECH Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -0.7A
VBE(on) Base-Emitter On Voltage
IC= -7A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE-1
DC Current Gain
IC= -20mA; VCE= -5V
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
hFE-3
DC Current Gain
IC= -7A; VCE= -5V
COB
Output Capacitance
IE= 0; VCE= -10V; ftest=1MHz
fT
Current-Gain—Bandwidth Product
IC=-0.5A; VCE= -10V
hFE-2 Classifications
R
Q
P
40-80 60-120 100-200
2SB1057
MIN TYP. MAX UNIT
-150
V
-2.0 V
-1.8 V
-50 μA
-50 μA
20
40
200
20
450
pF
20
MHz
SPTECH website:www.superic-tech.com
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