2SB1057P 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SB1057P Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1057
DESCRIPTION
• Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Max)@lc= -7A
• Wide Area of Safe Operation
• Complement to Type 2SD1488
APPLICATIONS
• Designed for high power amplification.
123
«*
Al,
-<1 -
3
PIN 1.BASE
2. COLLECTOR
3 EMITTER
TC-3PFa package
i—
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-150
V
VCEO Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-9
A
I CM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25'C
PC
Collector Power Dissipation
@ Tc=25nC
Tj
Junction Temperature
Tstg
Storage Temperature Range
-15
A
3
W
100
150
r
-55-150
•c
A
•J
r
'r
K
ir
T
mm
DIM WIN MAX
A 20.70 21.30
B 14.70 15.30
C
4.30 5.20
D 0.90 1.10
F
3.20 3.40
H
3.70 4.30
J
0.50 0.70
K 16.40 17.00
L
1.90 2.10
N 10.90 11.00
Q
5.60 6.00
R
1.80 2.20
S
3.10 3.50
T
8.70 9.30
U
0.55 0.75
N.I Semi-Condnctors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished hy N.I Semi-Conductors is believed to he both accurate and reliable at the time of going
to press. I hmever, N.I Semi-Conductors assumes no responsibility for an> errors or omissions discovered in itsuse.
N.I Semi-Coiuluclors enaniraiies customers to \erily that datasheets are current before placing orders.
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