ZTX327 데이터 시트보기 (PDF) - Diodes Incorporated.

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ZTX327

NPN SILICON PLANAR R.F. MEDIUM POWER TRANSISTOR

Diodes Incorporated. 

NPN SILICON PLANAR R.F.

MEDIUM POWER TRANSISTOR

ISSUE 2 – MARCH 94

ZTX327

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Temperature Range

SYMBOL

VCBO

VCEO

VCER

VEBO

IC

Ptot

Tj:Tstg

E-Line

TO92 Compatible

VALUE

55

30

55

3.5

400

1.5

-55 to +175

UNIT

V

V

V

V

mA

W

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base

V(BR)CBO

55

Breakdown Voltage

V

IC=100µA, IE=0

Collector-Emitter

V(BR)CEO(sus)

30

Sustaining Voltage

V(BR)CER(sus)

55

Emitter-Base

V(BR)EBO

3.5

Breakdown Voltage

V

IC=5mA, IB=0

IC=5mA, RBE=10Ω

V

IE=100µA,IC=0

Collector-Emitter

ICEO

Cut-Off Current

20

µA

VCB=45V

Collector-Emitter

Saturation Voltage

Static Forward

Current Transfer

Transitional

Frequency

Output Capacitance

VCE(SAT)

hFE

fT

Cobo

R.F. power output

Efficiency

POUT

η

1.0

15

500 800

3.0

350 440

50 70

V

IC=100mA, IB.=20mA

IC=50mA, VCE=5V

MHz

pF

mW

%

IC=25mA, VCE=15V

f=100MHz

VCE=15V, IC=25mA

f=100MHz

VCC=12V, PIN=80mW

f=400MHz

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