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4N32 데이터 시트보기 (PDF) - CT Micro International Corporation

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4N32
CTMICRO
CT Micro International Corporation CTMICRO
4N32 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Electrical Characteristics TA = 25°C (unless otherwise specified)
Emitter Characteristics
Symbol
Parameters
VF
Forward voltage
VF
Forward voltage H11B3
IR
Reverse Current
CIN
Input Capacitance
Test Conditions
IF=10mA
IF=50mA
VR = 6V
f= 1MHz
Min Typ Max Units Notes
1.24
1.4
V
1.45
1.5
V
-
-
5
µA
-
45
-
pF
Detector Characteristics
Symbol
Parameters
BVCEO Collector-Emitter Breakdown
BVECO Emitter-Collector Breakdown
BVCBO Collector-Base Breakdown
ICEO Collector-Emitter Dark Current
Test Conditions
IC= 100µA
IE= 100µA
IC= 100µA
VCE= 10V, IF=0mA
Min
Typ
Max Units Notes
55
-
-
V
7
-
-
V
55
-
-
V
-
-
100
nA
Transfer Characteristics
Symbol
Parameters
4N29, 4N30
4N31
CTR
Current
Transfer
Ratio
4N32, 4N33
H11B1
H11B2
H11B3
H11B255
TIL113
Collector- 4N29, 4N30, 4N32,
Emitter
4N33
VCE(SAT)
Saturation
Voltage
4N31, TIL113
H11B1, H11B2,
H11B3
H11B255
RIO
Isolation Resistance
CIO
Isolation Capacitance
Test Conditions
IF= 10mA, VCE= 10V
IF= 1mA, VCE= 10V
IF= 10mA, VCE= 5V
IF= 10mA, VCE= 1V
IF= 8mA, IC= 2mA
IF= 8mA, IC= 2mA
IF= 1mA, IC= 1mA
IF=50mA, IC= 50mA
VIO= 500VDC
f= 1Mhz
CT Microelectronics
Proprietary & Confidential
Page 3
Min
Typ
100
-
50
-
500
-
500
-
200
-
100
-
100
-
300
-
-
-
-
-
-
-
-
1x1011
-
0.25
Max Units Notes
-
-
-
-
%
-
-
-
-
1.0
1.2
V
1.0
1.0
pF
Rev 1
Apr, 2014

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