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MTD5P06V

TMOS V Power Field Effect Transistor DPAK for Surface Mount

Motorola => Freescale 

MTD5P06V

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

—

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

IDSS

—

—

IGSS

—

VGS(th)

2.0

—

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 2.5 Adc)

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 5 Adc)

(VGS = 10 Vdc, ID = 2.5 Adc, TJ = 150°C)

Forward Transconductance

(VDS = 15 Vdc, ID = 2.5 Adc)

RDS(on)

—

VDS(on)

—

—

gFS

1.5

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

Coss

—

Crss

—

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 30 Vdc, ID = 5 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

td(on)

—

tr

—

td(off)

—

tf

—

Gate Charge

(See Figure 8)

(VDS = 48 Vdc, ID = 5 Adc,

VGS = 10 Vdc)

QT

—

Q1

—

Q2

—

Q3

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 5 Adc, VGS = 0 Vdc)

(IS = 5 Adc, VGS = 0 Vdc, TJ = 150°C)

VSD

—

—

Reverse Recovery Time

(IS = 5 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

trr

—

ta

—

tb

—

QRR

—

LD

—

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

—

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

Vdc

—

—

61.2

—

mV/°C

µAdc

—

10

—

100

—

100

nAdc

Vdc

2.8

4.0

4.7

—

mV/°C

0.34

0.45

Ohm

Vdc

—

2.7

—

2.6

Mhos

3.6

—

367

510

pF

140

200

29

60

11

20

ns

26

50

17

30

19

40

12

20

nC

3.0

—

5.0

—

5.0

—

Vdc

1.72

3.5

1.34

—

97

—

ns

73

—

24

—

0.42

—

µC

nH

4.5

—

nH

7.5

—

2

Motorola TMOS Power MOSFET Transistor Device Data

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