MTD5P06VT4G 데이터 시트보기 (PDF) - ON Semiconductor
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MTD5P06VT4G Datasheet PDF : 7 Pages
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MTD5P06V
Preferred Device
Power MOSFET
5 Amps, 60 Volts P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Pb−Free Packages are Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 10 ms)
Drain Current − Continuous @ 25°C
− Continuous @ 100°C
− Single Pulse (tp ≤ 10 ms)
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
60
60
± 15
± 25
5
4
18
40
0.27
2.1
−55 to
175
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W/°C
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 5 Apk, L = 10 mH, RG = 25 W)
EAS
125
mJ
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
°C/W
3.75
100
71.4
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 seconds
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR−4 board using the 0.5 sq in drain pad size.
© Semiconductor Components Industries, LLC, 2006
1
July, 2006 − Rev. 6
http://onsemi.com
V(BR)DSS
60 V
RDS(on) TYP
340 mW
ID MAX
5.0 A
P−Channel
D
G
S
12
3
4
DPAK
CASE 369C
STYLE 2
MARKING
DIAGRAM
4
Drain
1
Gate
2
Drain
3
Source
Y
= Year
WW = Work Week
5P06V = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
MTD5P06V
DPAK
75 Units/Rail
MTD5P06VT4
MTD5P06VT4G
DPAK
DPAK
(Pb−Free)
2500/Tape & Reel
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MTD5P06V/D
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