MTD5P06VT4 데이터 시트보기 (PDF) - ON Semiconductor

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MTD5P06VT4

Power MOSFET

ON Semiconductor 

MTD5P06V

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(VDS = VGS, ID = 250 mAdc)

Threshold Temperature Coefficient (Negative)

Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 2.5 Adc)

Drain−Source On−Voltage

(VGS = 10 Vdc, ID = 5 Adc)

(VGS = 10 Vdc, ID = 2.5 Adc, TJ = 150°C)

Forward Transconductance

(VDS = 15 Vdc, ID = 2.5 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

Rise Time

Turn−Off Delay Time

(VDD = 30 Vdc, ID = 5 Adc,

VGS = 10 Vdc, RG = 9.1 W)

Fall Time

Gate Charge

(See Figure 8)

(VDS = 48 Vdc, ID = 5 Adc, VGS = 10 Vdc)

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 5 Adc, VGS = 0 Vdc)

(IS = 5 Adc, VGS = 0 Vdc, TJ = 150°C)

Reverse Recovery Time

(IS = 5 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperature.

Symbol Min Typ Max Unit

V(BR)DSS

IDSS

IGSS

Vdc

60

−

−

− 61.2 − mV/°C

mAdc

−

−

10

−

−

100

−

−

100 nAdc

VGS(th)

RDS(on)

VDS(on)

gFS

Vdc

2.0 2.8 4.0

−

4.7

− mV/°C

− 0.34 0.45

W

Vdc

−

−

2.7

−

−

2.6

1.5 3.6

Mhos

−

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

trr

ta

tb

QRR

LD

LS

−

367 510

pF

−

140 200

−

29

60

−

11

20

ns

−

26

50

−

17

30

−

19

40

−

12

20

nC

−

3.0

−

−

5.0

−

−

5.0

−

Vdc

− 1.72 3.5

− 1.34 −

−

97

−

ns

−

73

−

−

24

−

− 0.42 −

mC

nH

−

4.5

−

nH

−

7.5

−

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