2SC4603R 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SC4603R Datasheet PDF : 2 Pages
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., One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC4603R
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEo= 800V(Min.)
• High Switching Speed
• High Reliability
APPLICATIONS
• Switching regulators
• Ultrasonic generators
• High frequency inverters
• General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
900
V
VCEO Collector-Emitter Voltage
800
V
VEBO Emitter-Base voltage
10
V
Ic
Collector Current-Continuous
3
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
1
A
80
W
150
"C
-55-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.5 'CM/
f
1 2 3-
pIN 1.BASE
2. COLLECTOR
3, EMITTER
TO-3PML package
I
T —B
* a-
A
. ' -* c
-
n
U
I
H
t •• l ' . '
t ..
Kt
Z
G ~*" "*~L
T
mm
DIM WIN MAX
A 19.90 20.10
Bc
15.90
5.50
16.10
5.70
D O.§0 1.10
F 3.30 3.50
G 2.90 3.10
H 5.90 6.10
J 0.595 0.605
K 22.30 22.50
L 1,90 2.10
N 10.80 11.00
0 4.90 5.10
R 3.75 3.95
S 3.20 3,40
U 9.90 10.10
Y 4JO 4.90
Z 1.90 2.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conduetors is believed to be both accurate and reliable at the time of going
to press. I Umever, N.I Semi-Conduetors assumes no responsibility for any errors or omissions discovered in itsuse.
N.I Semi-Conduetors encourages customers to verify that datasheets are current before placing orders.
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