2SC4538R 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SC4538R Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc=10mA; IB=0
V(BR)CBO Collector-Base Breakdown Voltage
lc=1mA; !E=O
V(BR)EBO Emitter-Base Breakdown Voltage
|E=1mA;lc=0
VcE(sat) Collector-Emitter Saturation Voltage lc= 2A; IB= 0.4A
VeE(sat) Base-Emitter Saturation Voltage
lc= 2A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 900V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V;IC=0
hFE
DC Current Gain
lc= 2A; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc=3A, IB1=0.6A;IB2=-1.2A;
RL= 100fl; Pw=20us;
Duty Cycled 2%
2SC4538R
MIN TYP. MAX UNIT
800
V
900
V
10
V
1.0
V
1.5
V
1.0 mA
1.0 mA
10
1.0
|i S
4.0
|J S
0.8
li S
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