BDW52C 데이터 시트보기 (PDF) - SavantIC Semiconductor

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BDW52C

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ;IB=0

VCEsat-1 Collector-emitter saturation voltage IC=-5A; IB=-0.5A

VCEsat-2 Collector-emitter saturation voltage IC=-10A; IB=-2.5A

VBEsat

Base-emitter saturation voltage

IC=-10A; IB=-2.5A

VBE

Base-emitter on voltage

IC=-5A ; VCE=-4V

ICEO

Collector cut-off current

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

VCE=-50V; IB=0

VCB=-100V; IE=0

TC=150

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-5A ; VCE=-4V

hFE-2

DC current gain

IC=-10A ; VCE=-4V

fT

Transition frequency

IC=-0.5A ; VCE=-4V

Product Specification

BDW52C

MIN TYP. MAX UNIT

-100

V

-1.0

V

-3.0

V

-2.5

V

-1.5

V

-1.0 mA

-0.5

-5.0

mA

-2.0 mA

20

150

5

3

MHz

2

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