MJE340T 데이터 시트보기 (PDF) - Inchange Semiconductor

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MJE340T

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

MJE340T

ELECTRICAL CHARACTERISTICS

TC =25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB=B 0

V(BR)CBO Collector-Base Breakdown Voltage IC= 1.0mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 1.0mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA ;IB=B 5mA

ICBO

Collector Cutoff Current

VCB= 300V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 3V; IC= 0

hFE

DC Current Gain

IC= 50m A ; VCE= 10V

MIN MAX UNIT

300

V

300

V

3

V

1.0

V

0.1

mA

0.1

mA

100

240

isc Website：www.iscsemi.cn

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