APT8052SLL(2004) 데이터 시트보기 (PDF) - Advanced Power Technology
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APT8052SLL Datasheet PDF : 5 Pages
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60
OPERATION HERE
LIMITED BY RDS (ON)
10
5
100µS
1
.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
ID = 15A
1mS
10mS
12
VDS=100V
8
VDS=250V
VDS=400V
4
0
0
20 40 60 80 100 120
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
60
td(off)
50
40 VDD = 533V
RG = 5Ω
30 TJ = 125°C
L = 100µH
20
10
td(on)
0
5
10
15
20
25
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
700
600
500
VDD = 533V
RG = 5Ω
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
400
Eon
300
200
Eoff
100
0
5
10
15
20
25
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
7,000
1,000
100
APT8052BLL_SLL
Ciss
Coss
Crss
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
35
30
tf
25
VDD = 533V
20 RG = 5Ω
TJ = 125°C
L = 100µH
15
10
tr
5
0
5
10
15
20
25
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1000
800
600
VDD = 533V
ID = 15A
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
Eoff
Eon
400
200
0
0 5 10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
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