MCR8SN 데이터 시트보기 (PDF) - Digitron Semiconductors

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MCR8SN

SILICON CONTROLLED RECTIFIERS

Digitron Semiconductors 

DIGITRON SEMICONDUCTORS

MCR8SD, MCR8SM, MCR8SN

SILICON CONTROLLED RECTIFIERS

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive off-state voltage(1)

Peak repetitive reverse voltage

VDRM

VRRM

(TJ = -40 to +110°C, sine wave, 50 to 60Hz, gate open)

MCR8SD

V

400

MCR8SM

600

MCR8SN

800

On-state RMS current (180° conduction angles, TC = 80°C)

IT(RMS)

8

A

Peak non-repetitive surge current

(one half-cycle, sine wave, 60Hz, TJ = 110°C)

Circuit fusing (t = 8.3ms)

ITSM

80

A

I2t

26.5

A2s

Forward peak gate power (pulse width ≤ 1.0µs, TC = 80°C)

PGM

5

W

Forward average gate power (t = 8.3ms, TC = 80°C)

PG(AV)

0.5

W

Forward peak gate current (pulse width ≤ 1.0µs, TC = 80°C)

IGM

2

A

Operating temperature range

TJ

-40 to +110

°C

Storage temperature range

Tstg

-40 to +150

°C

Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent

with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristic

Thermal resistance, junction to case

Thermal resistance, junction to ambient

Maximum lead temperature for soldering

purposes 1/8” from case for 10s

Symbol

RӨJC

RӨJA

TL

Maximum

2.2

62.5

260

Unit

°C/W

°C/W

°C

ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted)

Characteristic

Symbol

OFF CHARACTERISTICS

Peak forward blocking current or reverse blocking current(2)

(VD = Rated VDRM or VRRM, RGK = 1kΩ)

TJ = 25°C

TJ = 110°C

IDRM,

IRRM

ON CHARACTERISTICS

Peak on-state voltage(3)

(ITM = 16A)

VTM

Gate trigger current (continuous dc) (4)

(VD = 12V, RL = 100Ω)

IGT

Holding current (4)

(VD = 12V, gate open, initiating current = 200mA)

IH

Latch current (4)

(VD = 12V, IG = 200µA)

IL

Gate trigger voltage (continuous dc) (4)

(VD = 12V, RL = 100Ω)

TJ = 25°C

VGT

TJ = -40°C

* Pulse width ≤ 2.0ms, duty cycle ≤ 2%.

Min

-

-

-

5.0

-

-

0.3

-

Typ

Max

-

10

-

500

-

1.8

25

200

0.5

6.0

0.6

8.0

0.65

1.0

-

1.5

Unit

µA

V

µA

mA

mA

V

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

Rev. 20121228

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