MMSD701T1G 데이터 시트보기 (PDF) - ON Semiconductor

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MMSD701T1G

SOD-123 Schottky Barrier Diodes

ON Semiconductor 

MMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G,

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Reverse Breakdown Voltage

(IR = 10 mA)

MMSD301T1G, SMMSD301T1G

MMSD701T1G, SMMSD701T1G

V(BR)R

30

−

−

70

−

−

Diode Capacitance

(VR = 0 V, f = 1.0 MHz)

MMSD301T1G, SMMSD301T1G

MMSD701T1G, SMMSD701T1G

CT

−

0.9

1.5

−

0.5

1.0

Total Capacitance

(VR = 15 V, f = 1.0 MHz)

MMSD301T1G, SMMSD301T1G

(VR = 20 V, f = 1.0 MHz)

MMSD701T1G, SMMSD701T1G

CT

−

0.9

1.5

−

0.5

1.0

Reverse Leakage

(VR = 25 V)

MMSD301T1G, SMMSD301T1G

(VR = 35 V)

MMSD701T1G, SMMSD701T1G

IR

−

13

200

−

9.0

200

Forward Voltage

(IF = 1.0 mAdc)

MMSD301T1G, SMMSD301T1G

(IF = 10 mA)

(IF = 1.0 mAdc)

MMSD701T1G, SMMSD701T1G

(IF = 10 mA)

VF

−

0.38

0.45

−

0.52

0.6

−

0.42

0.5

−

0.7

1.0

Unit

V

pF

pF

nAdc

Vdc

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