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MTP1N50E Datasheet PDF : 8 Pages
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MTP1N50E
Preferred Device
Power MOSFET
1 Amp, 500 Volts
N−Channel TO−220
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, the MOSFET is designed to
withstand high energy in the avalanche and commutation modes. The
new energy efficient design also offers a drain−to−source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
VDSS
500
Drain−Gate Voltage (RGS = 1.0 MΩ)
VDGR
500
Gate−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Drain Current − Continuous
− Continuous @ 100°C
− Single Pulse (tp ≤ 10 µs)
ID
1.0
ID
0.8
IDM
3.0
Total Power Dissipation
Derate above 25°C
PD
40
0.32
Operating and Storage Temperature Range
TJ, Tstg − 55 to
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 100 Vdc, VGS =10 Vdc,
IL = 3.0 Apk, L =10 mH, RG = 25 Ω)
Thermal Resistance
− Junction to Case
− Junction to Ambient, when surface
mounted using minimum recommended
pad size
EAS
45
RθJC
RθJA
3.13
62.5
Maximum Lead Temperature for Soldering
TL
260
Purposes, 1/8″ from case for 10 seconds
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
1 AMPERE
500 VOLTS
RDS(on) = 5 Ω
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Drain
1
2
3
TO−220AB
CASE 221A
STYLE 5
MTP1N50E
LLYWW
1
Gate
3
Source
2
Drain
MTP1N50E = Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP1N50E
TO−220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
August, 2004 − Rev. XXX
Publication Order Number:
MTP1N50E/D
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