MTP1N60 데이터 시트보기 (PDF) - New Jersey Semiconductor
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MTP1N60 Datasheet PDF : 2 Pages
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Jbztni-L.onaucto'i iJ^
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
N-Channel Mosfet Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MTP1N60
FEATURES
• Drain Current -ID= 1A@ TC=25°C
• Drain Source Voltage-
: VDSS= 600V(Min)
Static Drain-Source On-Resistance
: Rosfon) = 8 Q (Max)
Avalanche Energy Specified
• Fast Switching
Simple Drive Requirements
DESCRITION
1 Designed for high efficiency switch mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
I DM
Drain Current-Single Plused
PD
Total Dissipation @Tc=25'C
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature
PIN LGate
2.Drain
3.Source
TO-251 package
VALUE
600
±20
1
4
28
150
-55-150
UNIT
V
V
A
A
W
•c
•c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
4.5
110
UNIT
"C/W
'CM/
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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