MTSF3N02HD 데이터 시트보기 (PDF) - ON Semiconductor
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MTSF3N02HD Datasheet PDF : 12 Pages
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MTSF3N02HD
di/dt = 300 A/µs
Standard Cell Density
trr
High Cell Density
trr
ta
tb
t, TIME
Figure 13. Reverse Recovery Time (trr)
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define the
maximum simultaneous drain–to–source voltage and drain
current that a transistor can handle safely when it is forward
biased. Curves are based upon maximum peak junction
temperature and a case temperature (TC) of 25°C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance – General
Data and Its Use.”
Switching between the off–state and the on–state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 µs. In addition
the total power averaged over a complete switching cycle
must not exceed (TJ(MAX) – TC)/(RθJC).
100
VGS = 8 V
SINGLE PULSE
TC = 25°C
10
100 µs
1 ms
10 ms
1
dc
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 14. Maximum Rated Forward Biased
Safe Operating Area
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