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MTY16N80E Datasheet PDF : 7 Pages
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MTY16N80E
Designer’s™ Data Sheet
TMOS E−FET.™
Power Field Effect
Transistor
N−Channel Enhancement−Mode Silicon
Gate
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this advanced TMOS E−FET is
designed to withstand high energy in the avalanche and commutation
modes. Designed for high voltage, high speed switching applications
in power supplies, converters and PWM motor controls, these devices
are particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
http://onsemi.com
TMOS POWER FET
16 AMPERES, 800 VOLTS
RDS(on) = 0.50 W
TO−264
CASE 340G−02
STYLE 1
D
G
®
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage — Continuous
— Non−Repetitive (tp ≤ 10 ms)
VDSS
VDGR
VGS
VGSM
800
Vdc
800
Vdc
± 20
Vdc
± 40
Vpk
Drain Current — Continuous
— Continuous @ TC = 100°C
— Single Pulse (tp ≤ 10 μs)
ID
16
Adc
ID
11
IDM
55
Apk
Total Power Dissipation
Derate above 25°C
PD
300
Watts
2.4
W/°C
Operating and Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Single Pulse Drain−to−Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 16 Apk, L = 10 mH, RG = 25 Ω )
EAS
mJ
1280
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
RθJC
RθJA
0.42
°C/W
30
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 1
Publication Order Number:
MTY16N80E/D
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