DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

CR02AM-8-F00 데이터 시트보기 (PDF) - Renesas Electronics

부품명
상세내역
제조사
CR02AM-8-F00
Renesas
Renesas Electronics Renesas
CR02AM-8-F00 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
CR02AM-8
Data Sheet
Electrical Characteristics
Parameter
Symbol Min.
Repetitive peak reverse current
IRRM
Typ.
Max.
0.1
Unit
mA
Test conditions
Tj = 125C, VRRM applied
Repetitive peak off-state current IDRM
0.1
mA Tj = 125C, VDRM applied
RGK=1 k
On-state voltage
VTM
1.6
V
Tc = 25C, ITM = 0.6 A,
instantaneous value
Gate trigger voltage
VGT
0.8
V
Tj = 25C, VD = 6 V,
IT = 0.1 A Note3
Gate non-trigger voltage
VGD
0.2
V
Tj = 125C, VD = 1/2 VDRM
RGK=1 k
Gate trigger current
IGT
1
100 Note2
A
Tj = 25C, VD = 6 V,
IT = 0.1 A Note3
Holding current
IH
3
mA Tj = 25C, VD = 12 V,
RGK=1 k
Thermal resistance
Rth (j-a)
180
C/W Junction to ambient
Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item
A
B
C
D
E
IGT (A)
1 to 30
20 to 50 40 to 100
1 to 50
20 to 100
The above values do not include the current flowing through the 1 kresistance between the gate and
cathode.
3. IGT, VGT measurement circuit.
60W
A1
IGS IGT
TUT
A3 A2
3V
DC
RGK
1
V1
2
6V
DC
1kW
VGT
Switch
Switch 1 : IGT measurement
Switch 2 : VGT measurement
(Inner resistance of voltage meter is about 1kW)
R07DS1423EJ0300 Rev.3.00
Dec. 12, 2018
Page 2 of 8

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]