DTA124EG-AE3-R(2011) 데이터 시트보기 (PDF) - Unisonic Technologies

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DTA124EG-AE3-R
(Rev.:2011)

PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS)

Unisonic Technologies 

DTA124E

PNP EPITAXIAL SILICON TRANSISTOR

„ ABSOLUATE MAXIUM RATINGS (TA = 25℃, unless otherwise specified.)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

Input Voltage

VCC

50

V

VIN

-40 ~ +10

V

Output Current

IC

-100

mA

IO

-30

SOT-23/SOT-323

Power Dissipation

SOT-523

PD

200

mW

150

Junction Temperature

TJ

150

℃

Storage Temperature

TSTG

-40 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (TA= 25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

Input Voltage

VI(OFF)

VI(ON)

VCC= -5V, IOUT= -100μA

VOUT= -0.2V, IOUT= -5mA

Output Voltage

Input Current

VO(ON)

II

IOUT/IIN= -10mA / -0.5 mA

VIN= -5V

Output Current

DC Current Gain

IO(OFF)

GI

VCC= -50V , VIN=0V

VOUT= -5V, IOUT= -5mA

Input Resistance

R1

Resistance Ratio

R2/R1

Transition Frequency

fT

VCE= -10 V, IE = 5mA, f=100MHz (Note)

Note: Transition frequency of the device

MIN TYP MAX UNIT

-0.5

V

-3

-0.1 -0.3 V

-0.36 mA

-0.5 μA

56

15.4 22 28.6 kΩ

0.8

1

1.2

250

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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