MHVIC2114R2 데이터 시트보기 (PDF) - Motorola => Freescale
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MHVIC2114R2 Datasheet PDF : 8 Pages
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Freescale Semiconductor, Inc.
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
Tstg
TJ
Pin
Symbol
RθJC
Value
65
- 0.5, +15
- 65 to +150
150
5
Value (1)
Unit
Vdc
Vdc
°C
°C
dBm
Unit
°C/W
Driver Application
(Pout = +0.2 W CW)
Stage 1, 27 Vdc, IDQ1 = 96 mA
Stage 2, 27 Vdc, IDQ2 = 204 mA
Stage 3, 27 Vdc, IDQ3 = 111 mA
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22 - A113
11.5
7.52
5.52
Class
1 (Minimum)
M1 (Minimum)
C2 (Minimum)
Rating
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
W - CDMA CHARACTERISTICS (In Motorola Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA,
Pout = 23 dBm, 2110 - 2170 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
29
32
36
dB
Gain Flatness
GF
—
0.3
0.5
dB
Input Return Loss
IRL
—
- 13
- 10
dB
Adjacent Channel Power Ratio
ACPR
—
- 60
- 57
dBc
Group Delay
Delay
—
1.7
—
ns
Phase Linearity
—
—
0.2
—
°
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
MHVIC2114R2
2
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
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