MRF8P8300HR6 데이터 시트보기 (PDF) - NXP Semiconductors.

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MRF8P8300HR6

RF Power Field Effect Transistors

NXP Semiconductors. 

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2

Machine Model (per EIA/JESD22--A115)

A

Charge Device Model (per JESD22--C101)

IV

Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (1)

Zero Gate Voltage Drain Leakage Current

(VDS = 70 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate--Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IDSS

—

—

10

Adc

IDSS

—

—

1

Adc

IGSS

—

—

1

Adc

On Characteristics

Gate Threshold Voltage (1)

(VDS = 10 Vdc, ID = 400 Adc)

VGS(th)

1.5

2.3

3.0

Vdc

Gate Quiescent Voltage

(VDD = 28 Vdc, IDQ = 2000 mA, Measured in Functional Test)

VGS(Q)

2.3

3.1

3.8

Vdc

Drain--Source On--Voltage (1)

(VGS = 10 Vdc, ID = 3 Adc)

VDS(on)

0.1

0.2

0.3

Vdc

Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2000 mA, Pout = 96 W Avg., f = 820 MHz,

Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz

Channel Bandwidth @ 5 MHz Offset.

Power Gain

Gps

20.0

20.9

23.5

dB

Drain Efficiency

D

34.5

35.7

—

%

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF

PAR

5.9

6.1

—

dB

Adjacent Channel Power Ratio

ACPR

—

--38.2

--36.5

dBc

Input Return Loss

IRL

—

--12

--9

dB

Typical Performance over Frequency (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2000 mA, Pout = 96 W Avg.,

Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz

Channel Bandwidth @ 5 MHz Offset.

Frequency

Gps

(dB)

D

Output PAR

ACPR

IRL

(%)

(dB)

(dBc)

(dB)

790 MHz

20.9

35.2

6.2

--38.1

--11

805 MHz

21.0

35.5

6.2

--38.1

--12

820 MHz

20.9

35.7

6.1

--38.2

--12

1. Each side of device measured separately.

2. Part internally matched both on input and output.

(continued)

MRF8P8300HR6 MRF8P8300HSR6

2

RF Device Data

Freescale Semiconductor, Inc.

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