MRF8P8300HR6 데이터 시트보기 (PDF) - NXP Semiconductors.

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MRF8P8300HR6

RF Power Field Effect Transistors

NXP Semiconductors. 

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS

VDD = 28 Vdc, IDQA = 1000 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle

61.5

60

Ideal

58.5

57

55.5

Actual

54

52.5

51

790 MHz

822 MHz

806 MHz

49.5

806 MHz 822 MHz 790 MHz

48

46.5

45

25 26.5 28 29.5 31 32.5 34 35.5 37 38.5 40 41.5

Pin, INPUT POWER (dBm)

NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V

f

(MHz)

790

806

822

P1dB

Watts dBm

288

54.6

299

54.8

287

54.6

P3dB

Watts dBm

363

55.6

366

55.6

349

55.4

Test Impedances per Compression Level

f

(MHz)

Zsource



Zload



790

P1dB 1.04 -- j0.98 0.78 -- j0.73

806

P1dB 1.16 -- j1.39 0.76 -- j0.71

822

P1dB 1.24 -- j1.73 0.76 -- j0.74

Figure 11. Pulsed CW Output Power

versus Input Power @ 28 V

Note: Measurement made on a per side basis.

MRF8P8300HR6 MRF8P8300HSR6

8

RF Device Data

Freescale Semiconductor, Inc.

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