HMC374SC70E 데이터 시트보기 (PDF) - Analog Devices

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HMC374SC70E

GaAs pHEMT LOW NOISE AMPLIFIER

Analog Devices 

HMC374SC70E

v01.0814

GaAs pHEMT LOW NOISE AMPLIFIER

0.3 - 3.0 GHz

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

RF Input Power (RFIN)(Vdd = +5.0 Vdc)

Channel Temperature

Continuous Pdiss (T = 85 °C)

(derate 4.88 mW/°C above 85 °C)

Thermal Resistance

(channel to lead)

Storage Temperature

Operating Temperature

ESD Sensitivity (HBM)

+7.0 Vdc

15 dBm

150 °C

0.32 W

205 °C/W

-65 to +150 °C

-40 to +85 °C

Class 0

Outline Drawing

Typical Supply Current vs. Vdd

Vdd (V)

3

3.3

3.6

Idd (mA)

75

75

75

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEAD MATERIAL: COPPER ALLOY

3. LEAD PLATING: 100% MATTE TIN.

4. DIMENSIONS ARE IN INCHES [MILLIMETERS]

5. C HARACTERS TO BE HELVETICA MEDIUM, .015 HIGH,

WHITE INK OR LASER, LOCATED APPROXIMATELY AS SHOWN.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

7. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

8. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

Package Information

Part Number

Package Body Material

Lead Finish

HMC374SC70E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn

[1] Max peak reflow temperature of 235 °C

[2] Max peak reflow temperature of 260 °C

[3] 4-Digit lot number XXXX

MSL Rating

MSL1 [2]

Package Marking [3]

H374E

XXXX

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