TSC5303DCPRO 데이터 시트보기 (PDF) - TSC Corporation
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TSC5303DCPRO Datasheet PDF : 6 Pages
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TSC5303D
High Voltage NPN Transistor with Diode
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
RӨJC
RӨJA
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Static
Collector-Base Voltage
IC =1mA, IB =0
Collector-Emitter Breakdown Voltage IC =10mA, IE =0
Emitter-Base Breakdown Voltage
IE =1mA, IC =0
Collector Cutoff Current
VCB =700V, IE =0
Collector Cutoff Current
VCE =400V, IB =0
Emitter Cutoff Current
VEB =7V, IC =0
IC =0.4A, IB =0.1A
Collector-Emitter Saturation Voltage IC =1A, IB =0.25A
IC =2A, IB =0.5A
Base-Emitter Saturation Voltage
IC =1A, IB =0.25A
IC =2A, IB =0.5A
VCE =5V, IC =10mA
DC Current Gain
VCE =5V, IC =1A
VCE =5V, IC =2A
Forward Voltage Drop
IF =2A
Turn On Time
VCC =250V, IC =1A,
Storage Time
IB1=IB2=0.2A, tp=25uS
Fall Time
Duty Cycle<1%
Notes: Pulsed duration =380uS, duty cycle ≤2%
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
VCE(SAT)1
VCE(SAT)2
VCE(SAT)3
VBE(SAT)1
VBE(SAT)2
Hfe
Vf
tON
tSTG
tf
Limit
4.15
75
Min Typ
700
--
400
--
9
--
--
--
--
--
--
--
--
0.10
--
0.17
--
0.55
--
--
--
--
10
--
15
--
5
--
--
--
--
0.2
--
2.7
--
0.16
Unit
oC/W
oC/W
Max Unit
--
V
--
V
--
V
10
uA
10
uA
10
uA
0.7
1
V
--
1.1
V
1.2
--
30
--
2
V
0.6
uS
4.5
uS
0.3
uS
2/6
Version: B10
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