2SB1274 데이터 시트보기 (PDF) - New Jersey Semiconductor

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2SB1274

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Vpltage lc= -5mA; RBE= °"

V(BR)CBO Collector-Base Breakdown Voltage

lc=-1mA; IE=0

V(BR)EBO Emitter-Base Breakdown Voltage

lE=-1mA;lc=0

VcE(sat) Collector-Emitter Saturation Voltage lc= -2A; IB= -0.2A

VeE(on) Base-Emitter On Voltage

lc= -0.5A; VCE= -5V

ICBO

Collector Cutoff Current

VCE= -40V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -4V; lc= 0

hpE-1

DC Current Gain

lc= -0.5A; VCE= -5V

hpE-2

DC Current Gain

lc= -3A; VCE= -5V

COB

Output Capacitance

lE=0;VCB=-10V;f= 1MHz

fi

Current-Gain—Bandwidth Product

lc= -0.5A; VCE= -5V

E.! Classifications

Q

R

S

70-140 100-200 140-280

2SB1274

MIN TYP. MAX UNIT

-60

V

-60

V

-6

V

-1.0

V

-1.0

V

-0.1 mA

-0.1

mA

70

280

20

60

PF

100

MHz

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