BFS481 데이터 시트보기 (PDF) - Infineon Technologies
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BFS481 Datasheet PDF : 6 Pages
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Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz
• Two (galvanic) internal isolated Transistors in
one package
• For orientation in reel see package information below
• Easy to use Pb-free (RoHS compliant) and halogen
free industry standard package with visible leads
• Qualification report according to AEC-Q101 available
BFS481
4
5
6
3
2
1
C1
E2
B2
6
5
4
TR2
TR1
1
2
3
B1
E1
C2
EHA07196
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFS481
Marking
Pin Configuration
Package
RFs
1=B 2=E 3=C 4=B 5=E 6=C SOT363
1
2013-06-18
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