BFS481 데이터 시트보기 (PDF) - Siemens AG

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BFS481

NPN Silicon RF Transistor

Siemens AG 

NPN Silicon RF Transistor

• For low-noise, high-gain broadband amplifier

at collector currents from 0.5 to 12 mA

• fT = 8 GHz

F = 1.4 dB at 900 MHz

• Two (galvanic) internal isolated

Transistors in one package

BFS 481

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

BFS 481 RFs

Q62702-F1572

1/4 = B 2/5 = E 3/6 = C

Package

SOT-363

data below is of a single transistor

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

TS ≤ 83 °C

Junction temperature

Ambient temperature

Storage temperature

Thermal Resistance

Junction - soldering point 1)

Symbol

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

Tj

TA

Tstg

RthJS

1) TS is measured on the collector lead at the soldering point to the pcb.

Values

12

20

20

2

20

2

175

150

- 65 ... + 150

- 65 ... + 150

≤ 380

Unit

V

mA

mW

°C

K/W

Semiconductor Group

1

Dec-16-1996

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