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BFS481 데이터 시트보기 (PDF) - Siemens AG
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BFS481
NPN Silicon RF Transistor
Siemens AG
BFS481 Datasheet PDF : 6 Pages
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BFS 481
Collector-base capacitance
C
cb
=
f
(
V
CB
)
V
BE
=
v
be
= 0,
f
= 1MHz
0.40
pF
C
cb
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
4
8
12
16
Power Gain
G
ma
,
G
ms
=
f
(
I
C
)
f
= 0.9GHz
V
CE
= Parameter
V 22
V
R
22
dB
G
18
10V
5V
16
3V
14
2V
12
10
1V
8
0.7V
6
4
0
5
10
15
mA
25
I
C
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= Parameter
9
GHz
f
T
7
6
10V
8V
5
5V
4
3
2
1
0
0
4
8
12
16
Power Gain
G
ma
,
G
ms
=
f
(
I
C
)
f
= 1.8GHz
V
CE
= Parameter
3V
2V
1V
0.7V
mA 24
I
C
16
dB
G
12
10V
5V
10
3V
8
2V
6
4
1V
2
0.7V
0
0
5
10
15
mA
25
I
C
Semiconductor Group
5
Dec-16-1996
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