BFR280W 데이터 시트보기 (PDF) - Infineon Technologies

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BFR280W

NPN Silicon RF Transistor

Infineon Technologies 

BFR280W

NPN Silicon RF Transistor

3

For low noise, low-power amplifiers in mobile

communication systems (pager, cordless

telephone) at collector currents from 0.2 mA to 8 m

fT = 7.5 GHz

F = 1.5 dB at 900 MHz

2

1

VSO05561

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

BFR280W

REs

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

TS = 115 °C 1)

Junction temperature

Ambient temperature

Storage temperature

Pin Configuration

1=B

2=E

3=C

Package

SOT323

Symbol

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

Tj

TA

Tstg

Value

Unit

8

V

10

10

2

10

mA

1.2

80

mW

150

°C

-65 ... 150

-65 ... 150

Thermal Resistance

Junction - soldering point2)

RthJS

435

K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note Thermal Resistance

1

Jun-27-2001

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