BFR193W(2001) 데이터 시트보기 (PDF) - Infineon Technologies

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BFR193W
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

NPN Silicon RF Transistor

For low noise, high-gain amplifiers up to 2 GHz

For linear broadband amplifiers

fT = 8 GHz

F = 1.3 dB at 900 MHz

BFR193W

3

2

1

VSO05561

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

BFR193W

RCs

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

TS
63 °C 1)

Junction temperature

Ambient temperature

Storage temperature

Pin Configuration

1=B

2=E

3=C

Package

SOT323

Symbol

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

Value

Unit

12

V

20

20

2

80

mA

10

580

mW

Tj

150

°C

TA

-65 ... 150

Tstg

-65 ... 150

Thermal Resistance

Junction - soldering point2)

RthJS

150

K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note Thermal Resistance

1

Aug-09-2001

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