BFR193W(2001) 데이터 시트보기 (PDF) - Infineon Technologies

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BFR193W
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

BFR193W

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-emitter cutoff current

VCE = 20 V, VBE = 0

Collector-base cutoff current

VCB = 10 V, IE = 0

Emitter-base cutoff current

VEB = 1 V, IC = 0

DC current gain

IC = 30 mA, VCE = 8 V

V(BR)CEO 12

-

-V

ICES

-

- 100 µA

ICBO

-

- 100 nA

IEBO

-

-

1 µA

hFE

50 100 200 -

2

Aug-09-2001

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