BFR193W 데이터 시트보기 (PDF) - Infineon Technologies

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BFR193W

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

Low Noise Silicon Bipolar RF Transistor

• For low noise, high-gain amplifiers up to 2 GHz

• For linear broadband amplifiers

• fT = 8 GHz, NFmin = 1 dB at 900 MHz

• Pb-free (RoHS compliant) package

• Qualification report according to AEC-Q101 available

BFR193W

3

2

1

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFR193W

Marking

Pin Configuration

RCs

1=B

2=E

3=C

Package

SOT323

Maximum Ratings at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation1)

TS ≤ 63°C

Junction temperature

Storage temperature

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

TJ

TStg

12

V

20

20

2

80

mA

10

580

mW

150

°C

-55 ... 150

Thermal Resistance

Parameter

Symbol

Value

Junction - soldering point2)

RthJS

150

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)

Unit

K/W

1

2014-04-07

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