BFR193W 데이터 시트보기 (PDF) - Infineon Technologies

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BFR193W

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

BFR193W

Electrical Characteristics at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 50 mA, VCE = 8 V, f = 500 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz, VBE = 0 ,

emitter grounded

fT

6

8

- GHz

Ccb

- 0.74 1 pF

Collector emitter capacitance

VCE = 10 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

- 0.28 -

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

-

1.8

-

Minimum noise figure

IC = 10 mA, VCE = 8 V, ZS = ZSopt,

f = 900 MHz

f = 1.8 GHz

NFmin

dB

-

1

-

-

1.6

-

Power gain, maximum available1)

IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt,

f = 900 MHz

Gma

f = 1.8 GHz

-

16

-

- 10.5 -

Transducer gain

IC = 30 mA, VCE = 8 V, ZS = ZL = 50Ω,

f = 900 MHz

f = 1.8 GHz

|S21e|2

dB

- 13.5 -

-

8

-

Third order intercept point at output2)

IC = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω,

f = 900 MHz

IP3

-

30

- dBm

1dB Compression point

IC = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω,

f = 900 MHz

P-1dB

-

13

-

1Gma = |S21 / S12| (k-(k²-1)1/2)

2IP3 value depends on termination of all intermodulation frequency components.

Termination used for this measurement is 50Ω from 0.2 MHz to 12 GHz

3

2014-04-07

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