BFR193W 데이터 시트보기 (PDF) - Siemens AG
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BFR193W Datasheet PDF : 7 Pages
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NPN Silicon RF Transistor
• For low noise, high-gain amplifiers up to 2GHz
• For linear broadband amplifiers
• fT = 8GHz
F = 1.3dB at 900MHz
BFR 193W
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFR 193W RCs
Q62702-F1510
1=B
2=E
3=C
Package
SOT-323
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 63 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
80
10
580
150
- 65 ... + 150
- 65 ... + 150
≤ 150
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-11-1996
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