ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
20
TC = 25°C
Pulse Test
16
12
ID = 20A
8
4
10A
0
5A
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
12
8
4
TC = 25°C
VDS = 10V
Pulse Test
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
5
3
2
103
Ciss
7
5
3
2
102
7
Coss
5
3 Tch = 25°C
2 VGS = 0V
f = 1MHz
101
2
3
5 7 100 2 3
5 7 101 2 3
Crss
5 7 102 2
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS10UMA-5A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
TC = 25°C
Pulse Test
0.8
0.6
VGS = 10V
0.4
= 20V
0.2
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
3
2
101
7
5
3
2
TC = 25°C,75°C,125°C
100
7
5
3
2
10–1
7 100 2 3 5 7 101
VDS = 10V
Pulse Test
2 3 57
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
5
Tch = 25°C
3
VGS = 10V
2
VDD = 150V
RGEN = RGS = 50Ω
td(off)
102
7
tf
5
tr
3
2
td(on)
101
7
5
7
100
23
5 7 101
2 3 57
DRAIN CURRENT ID (A)
Sep. 2001