BFP193(2001) 데이터 시트보기 (PDF) - Infineon Technologies

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BFP193
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

BFP193

Power Gain Gma, Gms = f(VCE):_____

|S21|2 = f(VCE):---------

f = Parameter

20

dB IC=30mA

0.9GHz

16

0.9GHz

14

12

1.8GHz

10

1.8GHz

8

6

4

2

0

0

2

4

6

8

V

12

VCE

Power Gain Gma, Gms = f(f)

Intermodulation Intercept Point IP3=f(IC)

(3rd order, Output, ZS=ZL=50 )

VCE = Parameter, f = 900MHz

34

8V

dBm

30

5V

28

26

3V

24

22

2V

20

18

16

1V

14

12

0 10 20 30 40 50 60 mA 80

IC

Power Gain |S21|2= f(f)

VCE = Parameter

34

dB

IC=30mA

28

24

20

16

12

8

10V

1V

4

0.7V

0

0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5

f

VCE = Parameter

32

dB

IC=30mA

26

22

18

14

10

6

10V

2

1V

0.7V

-2

0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5

f

7

Aug-09-2001

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