BFP193 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

제조사

BFP193

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

Low Noise Silicon Bipolar RF Transistor

• For low noise, high-gain amplifiers up to 2 GHz

3

• For linear broadband amplifiers

4

• fT = 8 GHz, NFmin = 1 dB at 900 MHz

• Pb-free (RoHS compliant) package

• Qualification report according to AEC-Q101 available

BFP193

2

1

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFP193

Marking

Pin Configuration

RCs 1 = C 2 = E 3 = B 4 = E -

-

Package

SOT143

Maximum Ratings at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation1)

TS ≤ 72°C

Junction temperature

Storage temperature

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

TJ

TStg

12

V

20

20

2

80

mA

10

580

mW

150

°C

-55 ... 150

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point2)

RthJS

135

K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)

1

2014-04-07

Share Link: