BFP193TW 데이터 시트보기 (PDF) - Vishay Semiconductors
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BFP193TW Datasheet PDF : 6 Pages
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BFP193T / BFP193TW / BFP193TRW
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Junction ambient
Test condition
1)
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Symbol
RthJA
Value
250
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-emitter cut-off current VCE = 20 V, VBE = 0
Collector-base cut-off current VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 1 V, IC = 0
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
Collector-emitter saturation
voltage
IC = 50 mA, IB = 5 mA
DC forward current transfer ratio VCE = 8 V, IC = 30 mA
Symbol
Min
ICES
ICBO
IEBO
V(BR)CEO
12
VCEsat
hFE
50
Typ.
0.1
100
Unit
K/W
Max
Unit
100
μA
100
nA
1
μA
V
0.5
V
150
www.vishay.com
2
Document Number 85015
Rev. 1.3, 05-Sep-08
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