BFR181T 데이터 시트보기 (PDF) - Vishay Semiconductors
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BFR181T Datasheet PDF : 4 Pages
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BFR181T/BFR181TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA.
Features
D Low noise figure
D High power gain
1
1
94 9280
2
3
13 581
BFR181T Marking: RF
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 652
23
13 570
BFR181TW Marking: WRF
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb ≤ 78 °C
Symbol
Value
Unit
VCBO
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
15
V
10
V
2
V
20
mA
2
mA
160
mW
150
°C
–65 to +150 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
RthJA
450
K/W
plated with 35mm Cu
Document Number 85024
Rev. 2, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
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