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BFR181W 데이터 시트보기 (PDF) - Siemens AG
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BFR181W
NPN Silicon RF Transistor
Siemens AG
BFR181W Datasheet PDF : 7 Pages
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BFR 181W
Collector-base capacitance
C
cb
=
f
(
V
CB
)
V
BE
=
v
be
= 0,
f
= 1MHz
0.5
C
cb
pF
0.3
0.2
0.1
0.0
0
4
8
12
16
Power Gain
G
ma
,
G
ms
=
f
(
I
C
)
f
= 0.9GHz
V
CE
= Parameter
V 22
V
R
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= Parameter
10
GHz
10V
f
T
8
8V
7
5V
6
5
3V
4
2V
3
1V
2
1
0
0 2 4 6 8 10 12 14 mA 18
f
T
Power Gain
G
ma
,
G
ms
=
f
(
I
C
)
f
= 1.8GHz
V
CE
= Parameter
20
dB
10V
18
5V
G
17
3V
16
15
2V
14
13
12
1V
11
10
9
8
0 2 4 6 8 10 12 14 mA 18
I
C
14
dB
10V
12
5V
G
11
3V
10
2V
9
8
7
6
1V
5
4
3
2
1
0
0 2 4 6 8 10 12 14 mA 18
I
C
Semiconductor Group
6
Dec-11-1996
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