BFR92W 데이터 시트보기 (PDF) - Infineon Technologies

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BFR92W

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

BFR92W

Low Noise Silicon Bipolar RF Transistor

• For broadband amplifiers up to 2 GHz and

fast non-saturated switches at collector currents

from 0.5 mA to 20 mA

3

2

1

• Pb-free (RoHS compliant) and halogen-free package

with visible leads

• Qualification report according to AEC-Q101 available

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFR92W

Marking

Pin Configuration

P1s

1=B

2=E

3=C

Package

SOT323

Maximum Ratings at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation1)

TS ≤ 90 °C

Junction temperature

Storage temperature

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

TJ

TStg

15

V

20

20

2.5

45

mA

4

280

mW

150

°C

-55 ... 150

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point2)

RthJS

215

K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)

1

2014-04-03

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