DMP2305UQ-7 데이터 시트보기 (PDF) - ZP Semiconductor
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DMP2305UQ-7 Datasheet PDF : 2 Pages
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DMP2305U
P-CHANNEL ENHANCEMENT MODE MOSFET
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Steady
State
Pulsed Drain Current (Note 6)
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±8
-4.2
-3.4
-10
Units
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.4
90
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
TJ = 25°C
Symbol Min
BVDSS
-20
IDSS
⎯
IGSS
⎯
VGS(th)
-0.5
RDS (ON)
⎯
|Yfs|
⎯
Ciss
⎯
Coss
⎯
Crss
⎯
RG
Qg
⎯
Qgs
⎯
Qgd
⎯
tD(on)
⎯
tr
⎯
tD(off)
⎯
tf
⎯
Typ
⎯
⎯
⎯
-
45
60
87
9
727
69
64
23
7.6
1.4
1.2
14.0
13.0
53.8
23.2
Notes:
3. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.
4. Repetitive rating, pulse width limited by junction temperature.
5. Short duration pulse test used to minimize self-heating effect.
Max
⎯
-1.0
±100
-0.9
60
90
113
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -20V, VGS = 0V
nA VGS = ±8V, VDS = 0V
V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -4.2A
mΩ VGS = -2.5V, ID = -3.4A
VGS = -1.8V, ID = -2.0A
S VDS = -5V, ID = -4A
pF
pF VDS = -20V, VGS = 0V
f = 1.0MHz
pF
Ω VGS = 0V, VDS = 0V, f = 1.0MHz
nC
nC VGS = -4.5V, VDS = -4V, ID = -3.5A
nC
ns
ns VDS = -4V, VGS = -4.5V,
ns RL = 4Ω, RG = 6Ω, ID = -1A
ns
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