D45C12_ 데이터 시트보기 (PDF) - Inchange Semiconductor
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D45C12_ Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat
Collector-emitter
saturation voltage
D45C2,3,5,6,8,9,11,12
D45C1,4,7,10
IC=-1A ;IB=-50mA
IC=-1A ;IB=-0.1A
VBEsat Base-emitter saturation voltage
IC=-1A ;IB=-0.1A
ICES
Collector cut-off current
VCE=Rated VCES
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
D45C2,3,5,6,8,9,11,12
D45C1,4,7,10
IC=-0.2A ; VCE=-1V
hFE-2
DC current gain
D45C1,4,7,10
D45C2,5,8,11
IC=-1A ; VCE=-1V
D45C3,6,9,12
fT
Transition frequency
Switching times
IC=-2A ; VCE=-1V
IC=-20mA;VCE=-4V;
f=1.0MHz
tr
Rise time
ts
Storage time
tf
Fall time
IC=-1.0A; VCC=-20V
IB1=-IB2=-0.1A
Product Specification
D45C Series
MIN TYP. MAX UNIT
-0.5
V
-1.3
V
-100 μA
-10 μA
40
120
25
10
20
20
40
MHz
0.2 μs
0.6 μs
0.3 μs
2
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