Ordering number : EN5853A
DL-3038-011
Red Laser Diode
DL-3038-011
Index Guided AlGaInP Laser Diode
Overview
DL-3038-011 is index guided 635 nm (Typ.) AlGaInP laser diode.
The low threshold current and short wavelength are achieved by a strained
multiple quantum well active layer.
The lasing wavelength is the same as He-Ne gas lasers. DL-3038-011 is
suitable for laser pointers.
Package Dimensions
0
ø9.0 – 0.03
Tolerance : ±0.2
Unit
: mm
ø5.35
ø4.75±0.15
ø2.1
Effective window diameter 1.0min.
Features
• Short wavelength
• High output power
• Low threshold current
• Low operating voltage
: 635 nm (Typ.)
: 5 mW CW
: Ith = 40 mA (Typ.)
: Vop = 2.2 V (Typ.)
1
3
2
Top view
1.0±0.1
LD facet
Absolute Maximum Ratings at Tc=25°C
Parameter
Symbol Ratings
Unit
Light Output
Po
5
mW
Reverse Voltage Laser VR
2
V
PIN
30
Operating Temperature Topr
-10 to +40
°C
Storage Temperature
Tstg
--40 to +85
°C
ø1.4max.
3 – ø0.45±0.1
Pin No. 1 2 3 ø2.54
9.0mm ø stem(Red)
Electrical Connection
1
3
LD
PD
Electrical and Optical Characteristics at Tc=25°C
2
– power supply system
Parameter
Threshold Current
Operating Current
Operating Voltage
Lasing Wavelength
Beam i) Perpendicular
Divergence Parallel
Off Axis
Perpendicular
Angle
Parallel
Differential Efficiency
Monitoring Output Current
Astigmatism
Symbol
Ith
Iop
Vop
λp
θ⊥
θ //
∆θ ⊥
∆θ //
dPo/dIop
Im
As
Condition Min. Typ. Max. Unit
CW
-
40
70
mA
Po=5mW
-
55
85
mA
Po=5mW
-
2.2
2.4
V
Po=5mW
-
635
640
nm
Po=5mW
25
35
40
deg.
Po=5mW
6
8
10
deg.
-
-
-
±3
deg.
--
-
-
±3
deg.
-
0.1
0.3
-
mW/mA
Po=5mW
0.05
0.2
-
mA
Po=5mW
-
8
--
µm
i) Full angle at half maximum note : The above product specifications are subject to change without notice.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2798 GI / N2897 GI, (IM) No.5853 1/3