ASI10731 데이터 시트보기 (PDF) - Advanced Semiconductor
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ASI10731 Datasheet PDF : 1 Pages
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VHB125-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB125-28 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
20 A
VCBO
65 V
VCEO
36 V
VCES
65 V
VEBO
PDISS
TJ
TSTG
θJC
4.0 V
270 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.65 OC/W
PACKAGE STYLE .500 6L FLG
C
A
2x ØN
FULL R
D
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
B
E
.725/18,42
G
F
H
MINIMUM
inches / mm
.150 / 3.43
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.970 / 24.64
.090 / 2.29
.150 / 3.81
JI
.045 / 1.14
.125 / 3.18
.725 / 18.42
.120 / 3.05
M
K
L
MAXIMUM
inches / mm
.160 / 4.06
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
ORDER CODE: ASI10731
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 100 mA
BVCES
IC = 100 mA
BVCEO
IC = 100 mA
BVEBO
IE = 10 mA
ICES
VCE = 30 V
hFE
VCE = 5.0 V
IC = 5.0 A
MINIMUM TYPICAL MAXIMUM
65
65
35
4.0
15
20
200
UNITS
V
V
V
mA
---
COB
VCB = 28 V
f = 1.0 MHz
250
pF
PG
VCE = 28 V
POUT = 125 W
f = 175 MHz 9.0
dB
ηC
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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