ASI10725(RevA) 데이터 시트보기 (PDF) - Advanced Semiconductor
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ASI10725 Datasheet PDF : 1 Pages
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VHB25-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB25-28S is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
4.0 A
VCBO
65 V
VCEO
35 V
VEBO
PDISS
TJ
TSTG
θJC
4.0 V
40 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
4.4 OC/W
PACKAGE STYLE .380 4L STUD
.112x45°
A
B
ØC
D
#8-32 UNC-2A
HI
J
G
F
E
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.980 / 24.89
C
.370 / 9.40
D
.004 / 0.10
E
.320 / 8.13
F
.100 / 2.54
G
.450 / 11.43
H
.090 / 2.29
I
.155 / 3.94
J
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10725
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 200 mA
BVCES
IC = 200 mA
BVEBO
IE = 10 mA
ICBO
VE = 28 V
hFE
VCE = 5.0 V
IC = 200 mA
MINIMUM TYPICAL MAXIMUM
35
65
4.0
2.0
5
---
UNITS
V
V
V
mA
---
COB
VCB = 28 V
f = 1.0 MHz
50
pF
fT
VCE = 10 V
IC = 200 mA
f = 100 MHz 250
PG
VCC = 28 V
POUT = 25 W
f = 175 MHz
8.5
ηC
60
MHz
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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