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VN808CM-E 데이터 시트보기 (PDF) - STMicroelectronics

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VN808CM-E
ST-Microelectronics
STMicroelectronics ST-Microelectronics
VN808CM-E Datasheet PDF : 21 Pages
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VN808CM-E
Table 5. Input pin
Symbol
Parameter
VINL Input low-level
IINL
Low-level input
current
VINH
IINH
Input high-level
High-level input
current
VI(HYST)
Input hysteresis
voltage
VICL Input clamp voltage
Test conditions
VIN = 1.25 V
VIN = 2.25 V
IIN = 1 mA
IIN = -1 mA
Electrical characteristics
Min Typ Max Unit
1.25
V
1
μΑ
2.25
V
10
μΑ
0.25
V
6.0
6.8
8.0
V
-0.7
V
Table 6. Protections
Symbol
Parameter
Test conditions
Min Typ Max Unit
TCSD
Case shutdown
temperature
125 130 135 °C
TCR
Case reset
temperature
110
°C
TCHYST
Case thermal
hysteresis
7
15
°C
TTSD
Junction shutdown
temperature
150 175 200 °C
TR
Junction reset
temperature
135
°C
THYST
Junction thermal
hysteresis
7
15
°C
Ilim
DC short-circuit
current
VCC = 24 V; RLOAD = 10 mΩ 0.7
1.7
A
Vdemag
Turn-off output clamp
voltage
IOUT = 0.5 A; L = 6 mH
VCC-57 VCC-52 VCC-47 V
Table 7.
Symbol
Status pin
Parameter
IHSTAT
ILSTAT
High-level output
current
Leakage current
VCLSTAT Clamp voltage
Test conditions
VCC = 18...32 V; RSTAT = 1 kΩ
(Fault condition)
Normal operation; VCC = 32 V
ISTAT = 1 mA
ISTAT = -1 mA
Min Typ Max Unit
2
3
4 mA
0.1 μA
6.0 6.8 8.0 V
-0.7
V
Doc ID 11456 Rev 8
5/21

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